Title:
DRY ETCHING
Document Type and Number:
Japanese Patent JPS5856338
Kind Code:
A
Abstract:
PURPOSE:To equalize concentration of radical extending over the whole region of a substrate to be treated being put on a supporting substrate by a method wherein a resin material is arranged around the substrate to be treated. CONSTITUTION:The supporting substrate 11 itself to be put thereof with the substrate 2 to be treated having a mask consisting of a photo resist film on the surface is formed of resin like Teflon or vinyl chloride. When the resin material is made to be exposed around the substrate 2 to be treated like this, the radicals are not only consumed on the substrate 2 to be treated when reactive dry etching is performed, but also the radicals react with the resin face exposed around the substrate 2 and are consumped. As a result, concentration of radical is equalized extending over the whole region of the substrate 2.
Inventors:
ARAKI MITSUYOSHI
Application Number:
JP15505981A
Publication Date:
April 04, 1983
Filing Date:
September 29, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/302; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Koshiro Matsuoka