Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE AND THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH0766415
Kind Code:
A
Abstract:
PURPOSE: To provide a thin-film transistor that uses uniform polycrystalline silicon film of good property formed by melting hydrogenated amorphous silicon.
CONSTITUTION: A hydrogenated amorphous silicon semiconductor layer 3 of thickness between 500 and 1500 is formed in a specified shape on a transparent substrate 1, and irradiated with laser light. A polycrystalline silicon layer 4 is formed by melting the layer 3. After a gate insulating film 6 and a gate electrode 7 are formed, and impurities are implanted, an interlayer insulating film is deposited. After that, holes for leading out the electrodes are formed, hydrogen plasma treatment is performed, and source and drain electrodes are formed.
Inventors:
YOSHIOKA TATSUO
KAWAMURA TETSUYA
FURUTA MAMORU
MIYATA YUTAKA
KAWAMURA TETSUYA
FURUTA MAMORU
MIYATA YUTAKA
Application Number:
JP20802493A
Publication Date:
March 10, 1995
Filing Date:
August 23, 1993
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/265; H01L21/20; H01L21/324; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; H01L21/336; H01L21/265; H01L21/268; H01L21/324
Attorney, Agent or Firm:
Masamichi Matsuda
Next Patent: ２値化装置