PURPOSE: To obtain a surface light emitting laser element having the vertical resonator structure by using a semiconductor laser element manufacturing technique of the conventional level resonator structure.

CONSTITUTION: After forming a high reflection insulating film 1 on an n-type GaAs substrate, crystallization growth of an n-type GaAs layer 17 is performed on the n-type GaAs substrate in the vertical direction while having high reflection insulating film 16 as a selective growth mask. An n-type AlGaAs clad layer, an AlGaAs active layer 18, a p-type AlGaAs clad layer, a p-type GaAs contact layer 19 are made to perform crystallization growth in order on both sides of the n-type GaAs layer 17 in the vertical direction, a low reflection insulating film 20 is formed thereon, a p-side electrode 21, an n-type electrode 22 are formed so as to complete a surface light emitting laser element. Thereby, the surface light emitting laser element of the vertical resonation structure can be obtained by using a semiconductor laser element manufacturing technique of the conventional level resonator structure.