Title:
MANUFACTURE OF TUNNEL TYPE JOSEPHSON JUNCTION ELEMENT
Document Type and Number:
Japanese Patent JPS5821882
Kind Code:
A
Abstract:
PURPOSE:To form an Al2O3 barrier layer of low dielectric constant and high quality by sputtering special gas containing O2 under special pressure to form an Al-rich layer before forming a tunnel barrier layer and then oxidizing directly it. CONSTITUTION:When an Nb-Al superconductive thin film is sputtered in mixture gas containing 0.1-3% of oxygen in C2F6, C3F8 or C4F10 gas or in a mixture gas containing at least two or more of CF4, C2F6, C3F3 or C4F10 in 0.1- 3% of oxygen, an Al-rich layer is formed on the thin film surface due to the difference of sputtering rate of the Al and the Nb. Thereafter, when the surfaces are oxidized, an Al2O3 tunnel barrier layer of low dielectric constant is formed. When O2 is mixed with Nb at the high sputtering velocity and is mixed with Al at the low sputtering velocity, the sputtering velocity becomes remarkable.
Inventors:
TAKENAKA HISATAKA
MICHIGAMI OSAMU
KATOU YUUJIROU
TANABE KEIICHI
YOSHII SHIZUKA
MICHIGAMI OSAMU
KATOU YUUJIROU
TANABE KEIICHI
YOSHII SHIZUKA
Application Number:
JP12157881A
Publication Date:
February 08, 1983
Filing Date:
August 03, 1981
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L39/24; (IPC1-7): H01L39/24
Attorney, Agent or Firm:
Takehiko Suzue