Title:
【発明の名称】半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP3104262
Kind Code:
B2
Abstract:
PURPOSE:To dissolve the deterioration of the mechanical strength of a fin structure and the difficulty of the formation of a capacitor insulating film and a selfplate electrode by a method wherein a node electrode is constituted of a laminated polycrystalline silicon film having at least one layer of an oxygen- containing polycrystalline silicon film. CONSTITUTION:A non-doped polycrystalline silicon film 107a is deposited by the thermal decomposition of a silane in a reduced CVD device. Subsequently, the silane is exposed in an argon atmosphere containing 0.2 to 0.5% of oxygen under the same temperature as that of the film 107a in the same device. Thereby, an oxygen-containing polycrystalline silicon film 108a is formed. By repeating the same operation, a non-doped polycrystalline silicon film 107b, an oxygen- containing polycrystalline silicon film 108b, a non-doped polycrystalline silicon film 107c and an oxygen-containing polycrystalline silicon film 108c are formed in order and a laminated polycrystalline silicon film is formed.
Inventors:
Takanori Saeki
Application Number:
JP4147491A
Publication Date:
October 30, 2000
Filing Date:
March 07, 1991
Export Citation:
Assignee:
NEC
International Classes:
H01L27/04; H01L21/336; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04
Attorney, Agent or Firm:
Naoki Kyomoto
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