Title:
【発明の名称】半導体装置及び半導体装置保護回路
Document Type and Number:
Japanese Patent JP3469250
Kind Code:
B2
Abstract:
The present invention relates to a Schottky diode, and aims at providing a structure having no P-N junction while improving voltage resistance against a reverse bias in a Schottky diode employed in combination with an insulated gate semiconductor device in particular. In order to attain the aforementioned object, a P-type impurity region (12) having a surface exposed on a surface of an N-type semiconductor substrate (11) functioning as a drain for functioning as a channel region and a gate insulator film (32) covering it are provided. A gate electrode (53) is extended from above the gate insulator film (32) over a first taper of an oxide film (31). In a Schottky diode (103) rendering the semiconductor substrate (11) a cathode and having a boundary layer (14) as a Schottky region, on the other hand, an anode electrode (53) is extended from above the boundary layer (14) over a second taper of the oxide film (31) existing above an end portion of the boundary layer (14).
More Like This:
| WO/2021/006105 | TERAHERTZ DEVICE |
| JP2020043238 | ELECTRONIC COMPONENT AND ELECTRONIC APPARATUS |
| JP2022136820 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE |
Inventors:
Hideki Takahashi
Shuichi Tominaga
Shuichi Tominaga
Application Number:
JP55649899A
Publication Date:
November 25, 2003
Filing Date:
October 08, 1998
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/329; H01L29/06; H01L29/40; H01L29/739; H01L29/78; H01L29/872; H01L21/285; H01L21/311; (IPC1-7): H01L29/47; H01L21/336; H01L29/78; H01L29/872
Domestic Patent References:
| JP62143450A | ||||
| JP8148675A | ||||
| JP62281366A | ||||
| JP5635474A | ||||
| JP6104424A |
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)