Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2835405
Kind Code:
B2
Abstract:
PURPOSE:To easily form a gate electrode by a method wherein an end part on the side of a switching element of the gate electrode is formed on a taper- shaped slope which gradually rises from the side of a substrate and a difference in level with reference to the side of the switching element on the transistor isolation side is made gentle as far as possible. CONSTITUTION:Regarding a gate electrode 3a of each transistor isolation, an end part 31 on the side of a switching element formed by adopting a switching means which combines an isotropic dry or wet etching operation or an isotropic etching operation and an anisotropic etching operation is formed to be a taper shape which gradually rises from the side of a substrate 1 when a polycrystalline silicon film is formed selectively. Consequently, the side of the end part 31 can be made a gentle slope; a difference in level with reference to the side of the switching element can be reduced sufficiently. Thereby, a steep part at the switching isolation end part is relaxed effectively; the gate electrode 3a at en active transistor part as the switching element can be formed easily.
Inventors:
TANAKA YOSHINORI
OZAKI KOJI
KIMURA HIROSHI
WAKAMYA WATARU
SATO SHINICHI
OZAKI KOJI
KIMURA HIROSHI
WAKAMYA WATARU
SATO SHINICHI
Application Number:
JP28140289A
Publication Date:
December 14, 1998
Filing Date:
October 26, 1989
Export Citation:
Assignee:
MITSUBISHI DENKI KK
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/8242
Domestic Patent References:
| JP6271267A | ||||
| JP57106063A |
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)