Title:
【発明の名称】半導体記憶素子
Document Type and Number:
Japanese Patent JP3319994
Kind Code:
B2
Abstract:
In a semiconductor storage device, a capacitor section is connected with a drain region of a MOS transistor by means of a polysilicon plug. The capacitor section has a lower electrode, a ferroelectric thin film, and an upper electrode stacked in this order. A TiN barrier metal is placed between the lower electrode and the plug. The lower electrode has a lower film made of a platinum-rhodium alloy and an upper film made of a platinum-rhodium alloy oxide which is in contact with the ferroelectric thin film.
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Inventors:
Yamazaki Nobuo
Kazuya Ishihara
Masaya Nagata
Kazuya Ishihara
Masaya Nagata
Application Number:
JP26331997A
Publication Date:
September 03, 2002
Filing Date:
September 29, 1997
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/8247; H01L21/02; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L27/115; H01L29/788; H01L29/792; H01L21/285; (IPC1-7): H01L27/105
Domestic Patent References:
| JP8139293A | ||||
| JP9162372A | ||||
| JP1174488A | ||||
| JP1168056A |
Attorney, Agent or Firm:
Takaya Koike