Title:
【発明の名称】半導体スイッチ
Document Type and Number:
Japanese Patent JP2545123
Kind Code:
B2
Abstract:
A semiconductor switch comprising a lateral DMOS (QMOS) and a lateral IGT (QIG) both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on (VGI) while the lateral IGT (VG) is switched off in order to reduce turn off power dissipation.
Inventors:
BARII MANA SHINGAA
GAATO WAANAA BURUNINGU
SATEIENDORANASU MATSUKERUJII
GAATO WAANAA BURUNINGU
SATEIENDORANASU MATSUKERUJII
Application Number:
JP27113888A
Publication Date:
October 16, 1996
Filing Date:
October 28, 1988
Export Citation:
Assignee:
FUIRITSUPUSU EREKUTORONIKUSU NV
International Classes:
H01L29/78; H01L27/088; H01L29/739; H02M3/158; H03K17/082; H03K17/567; H03K17/00; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)