PURPOSE: To decrease the amount of contaminating atoms implanted in a sample for ion implantation by engraving more than one groove on a side wall facing the position of a clamp at which the clamp holds the sample for ion implantation.
CONSTITUTION: A sample 2 for ion implantation is disposed on a platen 3 via an O-ring 4 and is held by a clamp 1. Thereafter, more than one groove is engraved in advance on a side wall facing the position of the clamp 1 at which it holds the sample for ion implantation. Next, an ion beam is introduced into the device so that ions are implanted in the sample 2 for ion implantation. Since the surface area of the clamp 1 which is exposed to the ion beam is reduced by formation of the grooves in the surface of the clamp 1, the amount of contaminating atoms from the clamp 1 sputtered by the ion beam is decreased, and the amount of contaminating atoms implanted in the sample 2 for ion implantation can be decreased.
ITOGA TOSHIHIKO
USUI HIROO
HIRAIWA ATSUSHI
HITACHI VLSI ENG