MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0817732

Kind Code:

A

Abstract:

PURPOSE: To generate a molecular beam for doping by means of the Knudsen cell even when a constituent element for a semiconductor and impurity composes a low-vapor-pressure compound by a method wherein the impurity is diluted and contained in the constituent element for the semiconductor.

CONSTITUTION: A doping raw material 8 in which an impurity 20 have been diluted in a matrix 10 which is composed of a constituent element for a semiconductor and which is evaporated at a temperature lower than the evaporation temperature of a compound of the constituent element and the impurity 20 is prepared. Then, a molecular beam which is generated from the Knudsen cell in which the doping raw material 8 has been housed is used as a molecular beam for doping, and the semiconductor which has been doped with the impurity 20 is deposited. The semiconductor is a II-VI compound semiconductor or a III-V compound semiconductor. In addition, the impurity 20 is nitrogen.

Inventors:

HORINO KAZUHIKO

Application Number:

JP14310494A

Publication Date:

January 19, 1996

Filing Date:

June 24, 1994

Export Citation:

Click for automatic bibliography generation Help

Assignee:

FUJITSU LTD

International Classes:

C30B29/40; C30B29/48; H01L21/203; (IPC1-7): H01L21/203; C30B29/40; C30B29/48

Attorney, Agent or Firm:

Teiichi

Next Patent: 被服用ハンガーの金属部品