Title:
【発明の名称】太陽電池およびその製造方法
Document Type and Number:
Japanese Patent JP3067821
Kind Code:
B2
Abstract:
PURPOSE:To provide a manufacture of polycrystalline thin film solar cell of high quality and low cost by growing polycrystalline silicon on a substrate such as a non-single crystalline metal substrate and by avoiding grain boundaries to form a junction. CONSTITUTION:An insulating layer 103 such as of SiO2 which forms a non- nucleation face over a metal substrate 101 with a thin silicide layer 102 interposed is overlaid with a polycrystalline Si layer 104: this Si layer is surfaced with a P<+> layer (or n<+> layer) 105 by avoiding crystal grain boundaries. The top of the P<+> layer (or n<+> layer) 105 is provided with a transparent conductive layer 106 and collector electrodes 107. High-conductivity metals W, Mo, Cr, and the like which form compounds with Si are used as the metal substrate materials.
Inventors:
Akishi Nishida
Application Number:
JP4558691A
Publication Date:
July 24, 2000
Filing Date:
February 20, 1991
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/205; H01L21/318; H01L21/84; H01L31/04; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JP6344717A | ||||
| JP618979A | ||||
| JP63182872A |
Attorney, Agent or Firm:
Yohei Yamashita (1 person outside)