Title:
【発明の名称】固体撮像装置
Document Type and Number:
Japanese Patent JP2875289
Kind Code:
B2
Abstract:
PURPOSE:To obtain an image signal whose sensitivity and picture quality are high by a method wherein picture-element cells constituted of photodiodes and MOSFET's are insulated electrically by using a MOS structure whose threshold voltage is made high. CONSTITUTION:Boron ions as a BL implanted layer RL are implanted into a photodiode photodetection part of a Ye picture element and a W picture element. This is intended to increase a photodiode capacity of the Ye picture element and the W picture element and to saturate them at the same luminance as that of G and Cy. Thereby, it is possible to prevent a highlight phenomenon which is tinted when a signal is saturated. Photodiode parts in individual picture elements and MOS transistor parts are constituted in such a way that the photodiode parts and the MOS transistor parts are arranged alternately in a direction of horizontal scanning lines. Thereby, a modulation degree in a horizontal direction can be increased. Consequently, an image signal whose picture quality is high can be obtained.
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Inventors:
NISHIZAWA SHIGEKI
TAKEMOTO KAYAO
KAIDA MASUMI
TAKEMOTO KAYAO
KAIDA MASUMI
Application Number:
JP20117389A
Publication Date:
March 31, 1999
Filing Date:
August 04, 1989
Export Citation:
Assignee:
HITACHI SEISAKUSHO KK
International Classes:
H01L27/146; H04N5/335; H04N5/341; H04N5/359; H04N5/361; H04N5/369; H04N5/374; H04N5/3745; (IPC1-7): H01L27/146; H04N5/335
Domestic Patent References:
| JP63294182A | ||||
| JP63276377A | ||||
| JP1154678A |
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)