Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6041232
Kind Code:
A
Abstract:
PURPOSE:To form a V-shape groove with improved yield and easiness by forming an InP oxidized film due to immersion in a solution which includes H2O2 between an InP substrate and an SiO2 film to prevent adherence of the InP substrate and the SiO2 film. CONSTITUTION:An InP substrate which has (100) plane is immersed in a mixture of H2O2 and H2O and an InP oxidized film 4 is formed on the surface of the substrate 1. After an SiO2 film 2 is formed on the surface of the oxidized film 4, a stripe like aperture 5 which has the longer direction with the direction (011) of the substrate 1 is formed on the SiO2 film 2. Then, the substrate 1 is immersed in an HCl series solution and a V-shaped etched groove 3 which has an exposed (111)B plane is formed on the substrate 1.
Inventors:
SUDOU HISAO
Application Number:
JP14982583A
Publication Date:
March 04, 1985
Filing Date:
August 17, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Koshiro Matsuoka
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