METHOD AND APPARATUS FOR PLASMA ETCHING

Title:

METHOD AND APPARATUS FOR PLASMA ETCHING

Document Type and Number:

Japanese Patent JPH0629248

Kind Code:

A

Abstract:

PURPOSE: To completely remove negative oxide from a silicon surface, without damaging the surface by making an oxygen source in a plasma chamber in a passive state or removing it. CONSTITUTION: Microwave is guided into a chamber 1, and a gas is guided into the chamber 1 through a pipe 13. A wafer 10 is placed on a substrate holder 9. Hydrogen or hydrogen into which a small quantity of argon buffer gas has been mixed can speedily remove a natural oxide layer at a temperature of not more than 200 deg.C for four seconds, without wafer bias, namely, with pure hydrogen, and for one second with hydrogen containing 5% argon. The etching time of pure hydrogen for four minutes can be obtained with 1.2 kW microwave power and the etching time of 5% of Ar and 95% of H2 for one minute by 1.37 kW. Thus, an ECR plasma chamber is used, and the silicon surface which is super-cleaned can be obtained in short time.

Inventors:

SHIAMAKU SARIMIAN
MIKERANJIERO DERUFUINO
BUUCHIN CHIYAN

Application Number:

JP1784893A

Publication Date:

February 04, 1994

Filing Date:

January 11, 1993

Export Citation:

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Assignee:

VARIAN ASSOCIATES

International Classes:

C23F4/00; H01L21/302; H01L21/3065; H01L21/311; H01L21/318; (IPC1-7): H01L21/302; C23F4/00

Attorney, Agent or Firm:

Sumio Takeuchi (2 outside)

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