PURPOSE: To enable a complete ohmic contact between polycrystalline silicon and a conductive transparent electrode by holding a thin-film in indium, tin or an indium-tin alloy similar to the conductive transparent electrode between them.

CONSTITUTION: A contact hole is bored to a silicon oxide film 14 on a drain region formed while coating the surface of a polycrystalline silicon thin-film 13, and a drain electrode extracting window is formed. The indium-tin thin-film in approximately 10∼100 is sputtered by using a target in the indium-tin alloy, and an indium oxide film containing tin oxide is sputtered continuously in approximately 1,000. An electrode for driving a liquid crystal of a desired pattern is obtained through photolithography technique. The polycrystalline silicon 13 of the drain region is in contact with the transparent electrode 16 through the indium-tin thin-film 15 at that time. The polycrystalline silicon 13 and the transparent electrode 16 are brought to a complete ohmic conductive state through the indium-tin thin-film by heating the whole at 200∼500°C. Lastly, the liquid crystal is oriented to the whole surface of a glass plate 12, and one panel board of a liquid crystal display unit is completed.