PURPOSE: To enable the safe and easy crushing of polycrystalline silicon without any impurity or fouling by irradiating the surface of the polycrystalline silicon with a high-density laser beam and advancing cracks formed on the surface into the interior of the crystal by an internal strain.
CONSTITUTION: This method for crushing polycrystalline silicon comprises depositing and growing a rodlike silicon core according to the thermal CVD method, providing the polycrystalline silicon (A), then arranging the component (A) in a gaseous carbon dioxide laser device, irradiating the surface of the component (A) with a high-density laser beam which is a gaseous carbon dioxide laser having 1-30mm diameter of an irradiation spot at 1-500kW/cm2 power density from the axial or diametral direction of the component (A) for about 5sec, applying a thermal shock thereto, producing cracks in the surface of the component (A), subsequently advancing the cracks into the interior by the internal strain of the component (A), affording bisected materials (B) such as a semicylindrical form, then successively changing the irradiation spot, repetitively irradiating the component (B) with the laser beam and crush the polycrystalline silicon.
NAKANO MAMORU
YAMAMOTO TAKASHI
TAKE MASAYUKI
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| JPH01140690A | 1989-06-01 | |||
| JPH029706A | 1990-01-12 | |||
| JPS57200385U | 1982-12-20 | |||
| JPS57200386U | 1982-12-20 | |||
| JPH02152554A | 1990-06-12 | |||
| JPS5148688B2 | 1976-12-22 | |||
| JPS63287565A | 1988-11-24 |