PURPOSE: To enable a mask to be formed in finer dimension than the marginal dimension specified by the wavelength of a light source of an aligner applicable for photolithography.
CONSTITUTION: A resist pattern 4a formed by photolithgraphy is etched away by oxygen plasma method to be contracted and then a masking thin film such as Al film 5, etc., is evaporated to be removed together with the resist pattern 4a for the formation of an aperture part. Otherwise, Al is evaporated into the resist pattern 4a inversely tapered using an inversion resist by spinevaporation step to form the Al film 5 and then Al film 5 and the resist pattern 4a are lifted off to form the aperture part. Through these procedures, a member such as a gate electrode, etc., can be formed using the Al film 5 having the aperture part contracted by these steps thereby enabling processing in fine dimension unrealizable by the conventional stepper to be performed.
INOUE KAORU
MATSUNO TOSHINOBU
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