Title:
PREPARATION OF THIN FILM CRYSTAL
Document Type and Number:
Japanese Patent JPS598688
Kind Code:
A
Abstract:
PURPOSE:To prepare a high-quality ribbon crystal at a low cost, by growing a ribbon crystal on the surface of a medium taking advantage of the differences in the specific gravities, inactivenesses and melting points between the medium and the raw material of the crystal. CONSTITUTION:A mixture of the raw material 3 of the crystal such as silicon and the developing material 4 is thrown to the high-temperature part 2 of a melting furnace having a temperature gradient in an inert gas atmosphere e.g. Ar, He, etc., and the molten mixture is allowed to flow to the low-temperature side 5. In the course of the flow, the crystal raw material 3 and the developing material 4 are separated vertically from each other by the difference in the specific gravity, and the crystal raw material floating on the developing material is recrystallized in the middle part 6 of the bath in the form of a thin film. Finally, the solid phase (silicon ribbon crystal, etc.) is separated from the liquid phase (developing material) at the low-temperature end, and only the crystal is pulled out of the bath to obtain the ribbon crystal 7 continuously. The thickness of the ribbon crystal can be controlled easily by controlling the mixing ratio of the crystal raw material to the developing material, or controlling the rate of pulling.
Inventors:
OGAWA KAZUFUMI
Application Number:
JP11718882A
Publication Date:
January 17, 1984
Filing Date:
July 06, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B9/00; B01J19/00; C30B11/00; C30B29/06; (IPC1-7): B01J19/00; C30B9/00
Attorney, Agent or Firm:
Toshio Nakao
Next Patent: PROCESS FOR GROWING ZNSE CRYSTAL