Title:
LIGHT EMITTING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6050979
Kind Code:
A
Abstract:
PURPOSE:To obtain a light emitting semiconductor device which can continuously emit a light or an incandescent light by interposing a transient region made of the laminated third non-single crystal semiconductor having large and small energy band widths between the first non-single crystal semiconductor of N type or P type having the first energy band width and the second non-single crystal semiconductor of P type or N type having the second energy band width. CONSTITUTION:The P type first non-single crystal layer 11 which has Egapprox.=2.0eV of energy band width Eg is accumulated on a light transmissive electrode 21 made of oxidized tin, and N type Si layer 13 of Eg=1.7eV is formed through a transition layer 12 made of layers 14-20 laminated thereon. Then, the second electrode 22 of the prescribed shape made similarly to oxidized tin is provided on the layer 13. In this construction, Eg of the layers 14-20 for forming the layer 12 is varied from Eg=2.5-2.8eV to Eg=1.7-2.0eV to stabilize the recombination of electrons and holes, thereby emitting a preferable light.
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Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP16002683A
Publication Date:
March 22, 1985
Filing Date:
August 30, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L21/205; H01L33/06; H01L33/10; H01L33/16; H01L33/34; H01L33/38; H01L33/42; (IPC1-7): H01L21/205; H01L33/00
Domestic Patent References:
| JPS5856415A | 1983-04-04 | |||
| JPS59181683A | 1984-10-16 |