PURPOSE: To easily remove Ge-containing Si (compd.) and Ge (compd.) adhered to and deposited on a thin film formation apparatus, pipings, etc., without any damage to the apparatus, etc., by bringing the same into contact with ClF3 or F2 gas to effect a reaction therebetween.
CONSTITUTION: Ge-containing Si or an Si compd. and Ge or a Ge compd. deposited on an apparatus for thin film formation therefrom, the jigs and parts thereof, and pipings are brought into contact with ClF3. gas or F2 gas to effect a reaction therebetween, whereby they are removed through the reaction without any damage to the apparatus, the jigs and parts thereof, and the pipings. According to the foregoing method, the extraneous matter or deposit on the thin film formation apparatus, the jigs and parts thereof, and the pipings can be comparatively simply cleaned out.
FUJII TADASHI
KOBAYASHI YOSHIYUKI
