Title:
METHOD OF PHOTO PLASMA GAS PHASE REACTION
Document Type and Number:
Japanese Patent JPS6027122
Kind Code:
A
Abstract:
PURPOSE:To reduce the quantity of oxygen in a produced coating film by performing the photo plasma gas phase reaction with electric energy by applying the light of 1,500-300cm<-1> wavenumber to the reactive gas of hydride or halogenide of silicon. CONSTITUTION:The device for photo plasma gas phase reaction (PPCVD) is mainly composed of a reaction system 10, a doping system 20 and an exhaust system 30. The reactive gas is sent from the doping system 20 through an introducing inlet 11. Firstly, the continuous light of 1,500-300cm<-1> wavenumber is injected from a light source 9 composed of a ceramic light emitting member. The light of such wavenumber is resonance-absorbed in an Si-H coupling and it is not resonance-absorbed in impurity water in the reactive gas, silane. Therefore, the reaction can be performed selectively. Next, plasma glow discharge is carried out by a high-frequency oscillator 4 and electrodes 5 and 6 to cause a plasma reaction thereby removing the SiOH in the coating film selectively.
Inventors:
YAMAZAKI SHIYUNPEI
TASHIRO MAMORU
MIYAZAKI MINORU
TASHIRO MAMORU
MIYAZAKI MINORU
Application Number:
JP13490083A
Publication Date:
February 12, 1985
Filing Date:
July 22, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
C23C16/50; C23C16/48; H01L21/205; H01L29/78; H01L29/786; H01L31/04; (IPC1-7): H01L21/26; H01L31/04
Domestic Patent References:
| JPS56124229A | 1981-09-29 | |||
| JPS5735937A | 1982-02-26 |