PURPOSE: To easily form a multilayered film uniform in film thickness distribution in forming a dielectric multilayered film on an optical element substrate by a vacuum vapor deposition method, by providing an arc shaped recessed part for a solid evaporation source and plural circular recessed parts for molten evaporation sources to the upper surface of a crucible on a disc.

CONSTITUTION: A rotatable crucible 6 is provided in a vacuum tank 1 and an electron beam generating apparatus 2 and an optical element substrate 3 on which an optical film 4 is formed are arranged in the vicinity of said crucible. The vacuum tank 1 is evacuated and the dielectric evaporation sources accommodated in the recessed parts 7, 8 of the crucible 6 is melted and evaporated by arc shaped electron beams 2' from an electron beam generating apparatus 2 to form a multilayered film 4 comprising plural dielectrics on the substrate 3 while the crucible 6 is rotated. In this case, a solid evaporation source such as SiO2 is accommodated in an arc shaped recessed part 13 while a molten evaporation sources such as Al2O3 or TiO2 is accommodated in plural circular recessed parts 141W1415 and both of them are successively vapor deposited while the crucible 12 is rotated to make it possible to form a dielectric multilayered film uniform in film thickness distribution on the substrate 3.