FORMATION OF RESIST MASK HAVING RESISTANCE TO PLASMA ETCHING

Title:

FORMATION OF RESIST MASK HAVING RESISTANCE TO PLASMA ETCHING

Document Type and Number:

Japanese Patent JPS59154

Kind Code:

A

Abstract:

A mask which is resistant to a plasma etching treatment is formed by lithographically patterning a radiation sensitive resist film (3) present on a substrate (1). The etch resistance of the mask is enhanced by exposure to a carbon monoxide plasma which forms a region (4) with an enhanced etch resistance at the surface of the patterned film. This method may be used for example to manufacture a photomask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate (1).

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Inventors:

JIYOSEFU MEIYAA
DEBITSUDO JIYON BINTON

Application Number:

JP8930883A

Publication Date:

January 05, 1984

Filing Date:

May 23, 1983

Export Citation:

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Assignee:

PHILIPS NV

International Classes:

C23F4/00; G03F7/26; G03F7/40; H01L21/027; (IPC1-7): C23F1/00; G03C5/00; G03C11/00; G03F7/00

Attorney, Agent or Firm:

Akihide Sugimura

Next Patent: CONTROL OF ISOMER FORMATION RATIO OF AROMATIC HYDROXYCARBOXYLIC ACIDS