PURPOSE: To obtain a magnetic head with good yield by using specific thin films as the 1st and 2nd insulating films provided on the shielding layer on a base plate.

CONSTITUTION: A shielding layer 32 consisting of an NiFe film is formed on a base plate 31 and an Al2O3 film (the 1st insulating film) 36' which is lower in ion etchig rate than an SiO2 film is formed thereon. An insulating film 37 consisting of an SiO2, SiO or Si3N4 film with which plasma etching is easier than with Al2O3 and an MR element layer 35 are successively formed thereon. A pattern 39 consisting of resist is formed by an exposing technique and with said pattern as a mask, the MR element layer 35, the insulating layer 37 and the MR element layer 34 are simultaneously etched by ion etching. The insulating layer is formed after the resist layer 39 is removed. Since the Al2O3 film 36' is not overetched, the magnetic head is obtd. in good yield.