Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS592317
Kind Code:
A
Abstract:
PURPOSE:To easily realize plural types of epitaxial growth layers on a single substrate by a method comprising the process of selectively depositing epitaxial growth layers different in both impurity density and density distribution, and the process of grinding those layers up to the appropriate thickness. CONSTITUTION:An oxide film 2 is formed on a semiconductor single crystal substrate 1 by sputtering, which udergoes patterning by photolithography. A compound containing an impurity source of certain amount and an element to be produced is fed into a reaction furnace together with carrier gas to deposite an epitaxial growth layer 3 of resistivity P1, which is then removed by a mechanical means to expose the surface of the oxide film 2 and also lapped to form the flat mirror surface. After removing the oxide film 2 by chemical etching, an epitaxial growth layer 4 of resistivity P2 is deposited with a mixed amount of the inpurity source being changed, which layer is then lapped to form the flat mirror surface. It is thus possible to obtain a semiconductor device 5 having on the same wafer two single crystal epitaxial growth layers 3, 4 of resistivities P1, P2 which are different in impurity density and uniform in density distribution.
Inventors:
YOSHIKAWA TAKEO
Application Number:
JP11110882A
Publication Date:
January 07, 1984
Filing Date:
June 28, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/73; H01L21/20; H01L21/331; (IPC1-7): H01L29/70
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: JPS592318