Title:
SEMICONDUCTOR LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JPS5944878
Kind Code:
A
Abstract:
PURPOSE:To remarkably improve the linearity of a current-optical output property by a method wherein the sectional area in the direction horizontal to the main surface of the substrate of a conductivity type semiconductor layer is more increased as it is close to an active layer. CONSTITUTION:The region of current flow in a P type clad layer 11 is strictured by a region 13 surrounded by an N type or high resistant semiconductor layer 12. The diameter of the stricture region 13 is more increased as it is closer to the active layer 15 from the point D1 nearest to a P-electrode 14. When current is made to flow from the P-electrode 14, the expansion of the current more enlarges as it is closer to the active layer 15. The expansion of the current becomes larger as the current value is smaller. The variation of this current expansion increases more remarkably than conventional, therefore the change of the luminous diameter compared with current further increases more than conventional.
Inventors:
UJI TOSHIO
Application Number:
JP15545482A
Publication Date:
March 13, 1984
Filing Date:
September 07, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L33/14; H01L33/24; H01L33/30; H01L33/40; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Uchihara Shin