MANUFACTURE OF FIELD EFFECT TRANSISTOR - MITSUBISHI ELECTRIC CORP

Title:

MANUFACTURE OF FIELD EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JPH0661253

Kind Code:

A

Abstract:

PURPOSE: To realize a gate electrode of a desired size accurately by forming an opaque film on a transparent insulating film formed on a conductive film which becomes a gate electrode, by forming a photoresist thereon and by performing patterning for forming a gate electrode.

CONSTITUTION: A first insulating film 5 which becomes a gate insulating film is formed on a semiconductor substrate 1, conductive films 7, 9 which becomes a gate electrode are formed thereon and a transparent second insulating film 11 including at least one of a silicon oxide film and a silicon nitride film is formed thereon. An opaque film 13 including one or more of a polycrystalline silicon film, an amorphous silicon film, a tungsten silicide film and a titanium nitride film is formed on a second insulating film 11 and a photoresist 15 is formed thereon. The photoresist 15 is irradiated with light, patterning for forming a gate electrode is performed and an opaque film 13 below the photoresist 15 is removed after patterning.

Inventors:

ISHIKAWA HIDEKAZU
SAITO TAKAYUKI
WATABE SHINYA

Application Number:

JP20779892A

Publication Date:

March 04, 1994

Filing Date:

August 04, 1992

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

G03F7/09; H01L21/027; H01L21/033; H01L21/28; H01L21/306; H01L21/336; H01L21/8242; H01L29/423; H01L29/43; H01L29/49; H01L29/78; (IPC1-7): H01L21/336; H01L29/784; H01L21/28; H01L21/306; H01L29/62

Attorney, Agent or Firm:

Fukami Hisaro (3 outside)

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