PURPOSE: To prevent the step coverage of film with respect to a contact hole and the adhesion of film to the inner side face of contact hole from deteriorating by providing a step for discharging the gas in an organic thin film prior to formation of a thin film by sputtering.

CONSTITUTION: An organic thin film 5 having three layer structure of a plasma TEOS film 2, an SOG film 3, and a plasma TESO film 4 is formed on a semiconductor substrate 1. A contact hole 6 is then formed therein and heating is conducted in order to discharge gas. The heating is conducted by blowing gas, heated by a lamp heater, to the rear of the semiconductor substrate 1 carried into a sputtering chamber while being held by a holder and a ring chuck. Subsequently, sputtering is conducted.