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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A/D CONVERSION CIRCUIT
Document Type and Number:
Japanese Patent JPH0661859
Kind Code:
A
Abstract:

PURPOSE: To provide a current source with a high output impedance, a highly accurate current mirror circuit and an A/D conversion circuit with high accuracy and low power consumption.

CONSTITUTION: A source of a MOS transistor(TR) M1 is connected to a power supply VDD and its gate receives a voltage VB1. The device is provided with the MOS TR M1, an operational amplifier 1 whose inverting input terminal connects to a drain of the MOS TRM1 and whose noninverting input terminal receives a voltage VB2, and a MOS TR M2 whose gate receives an output of the operational amplifier and whose source is connected to the drain of the TR M2, and they form a constant current source using the drain of the TR M2 as a current output terminal. A constant current flows to an imaginary ground of the operational amplifier without changing a drain voltage of the MOS TR M1 deciding the current even when a voltage at the current output terminal is subjected to change and then the current source with a high impedance is realized. A highly accurate current mirror is obtained by selecting drain voltages of the current mirror pair identically as an imaginary ground similarly to above.


Inventors:
TANBA HIROKO
YAMAKIDO KAZUO
OKAZAKI TAKAO
NISHIKAWA NORIMITSU
KOBAYASHI YOICHIRO
Application Number:
JP23431192A
Publication Date:
March 04, 1994
Filing Date:
August 10, 1992
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H03M1/38; H03F3/343; H03F3/347; H03M1/74; (IPC1-7): H03M1/38; H03F3/343; H03M1/74
Attorney, Agent or Firm:
Tamamura Shizuyo