PURPOSE: To obtain the integrated circuit device of small temperature dependency by forming a resistance element consisting of a metallic oxide film or a metallic film connected to a buried layer in concentration higher than an epitaxial layer through a first layer.

CONSTITUTION: The n+ buried layer 11 is formed selectively to a p type silicon substrate 5 before forming the n type epitaxial layer 2, and two n+ diffusion layers 12 in high concentration and a p type diffusion layer 3 formed at the same time as the diffusion of the base of an npn transistor are formed selectively so as to reach the n+ buried layer 11 from the mutually isolated surfaces of the epitaxial layer 2 in order to reduce an effect of a bulk resistor in the epitaxial layer 2 having an effect on the resistance element formed by the n+ buried layer 11 in parallel as much as possible. Thin-film resistors, which are formed through the evaporation, etc. of Ta, etc. and one ends thereof are connected to the buried layer 11 through metallic layers 6 and the n+ diffusion layers 12, are formed on a protective film 12.