PURPOSE: To provide an arrangement for coating or etching a substrate constituted to generate a DC bias voltage suitable for accelerating charge particles toward the substrate in HF plasma constitution for guiding the substrate to be processed by passing the substrate along electrodes.
CONSTITUTION: The plasma source of the arrangement for coating or etching the substrate has a bias pot 19. This bias pot 19 is disposed at a place of a dark space distance from a substrate carrier 11 and is subjected to the effect of HF. Dependently upon the used source, the bias pot 19 may be constituted as an independent unit or a component part of the source composed to a conducting state, for example, an HF magnetron. The specific setting of the AC potential on the carrier and consequently the ion bombardment on the substrate via the bonded HF power is made possible.
GUIDO BURANGU
RAINAA GEEGENBUARUTO
YOOHEN RITSUTAA
HERUMUUTO SHIYUTOORU
