Title:
FORMATION OF SEMICONDUCTOR ACTIVE LAYER
Document Type and Number:
Japanese Patent JPS6039825
Kind Code:
A
Abstract:
PURPOSE:To enable to activate impurity ions implanted in a semiconductor with a high activation ratio at heat-treating time after ion implantation by a method wherein the surface of the compound semiconductor substrate is covered with a silicon oxynitride film. CONSTITUTION:Impurities enabled to act as conductive impurities in a GaAs substrate 1, silicon for example, are implanted under some condition to the semi- insulating GaAs substrate 1 to form an ion implante layer 2. Then after a silicon oxynitride (SiOxNy) film 3 is formed at the temperature of the GaAs substrate of 650 deg.C, for example, according to the thermal decomposition method at the reaction system of monosilane-ammonia-oxygen, for example, as to cover the ion implanted layer 2, heat treatment is performed for 15min at 800 deg.C to activate the Si impurities, and the ion implanted layer 2 is converted into a GaAs active layer 4. When the surface of the GaAs substrate is covered with the silicon oxynitride and heat-treated, the implanted silicon indicates a high activation ratio.
Inventors:
KUZUHARA MASAAKI
KOUZU HIDEAKI
KOUZU HIDEAKI
Application Number:
JP14753183A
Publication Date:
March 01, 1985
Filing Date:
August 12, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/812; H01L21/265; H01L21/338; H01L21/8222; H01L27/082; (IPC1-7): H01L27/08; H01L29/80
Attorney, Agent or Firm:
Uchihara Shin
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