Title:
COMPOUND DRY ETCHING DEVICE
Document Type and Number:
Japanese Patent JPS5848422
Kind Code:
A
Abstract:
PURPOSE:To individually or simultaneously perform isotropic etching and anisotropic etching in the same reaction chamber for a processed substance by a method wherein coaxial type electrodes and parallel flat-plate type electrodes are arranged in the same reaction chamber. CONSTITUTION:A processed substance 5 to be etched which is arranged on the surface of a flat plate electrode 6 and a facing electrode 7 facing to the electrode 6 and arranged in almost parallel with the electrode 6 are arranged at the near center at the inside of shield electrodes 4 and the electrodes 6, 7 are connected to a high-frequency power source A respoctively. The faces of the electrodes 6, 7, coaxial electrodes 1, 2, and the faces of the shield electrodes 4 become vertical. A high frequency is applied across the electrodes 1, 2 and when the electrodes 6, 7 are grounded or maintained at floating potential, etching is isotopically proceeds. On the contrary, with the electrodes 1, 2 grounded or maintained at floating potential, and with a high frequency applied to the electrodes 6, 7 ion sheath is formed around the processed substance 5 and an ion vertically reaches against the processed substance 5. Therefore, anisotropic etching can be performed.
Inventors:
IKEJIMA HIROSHI
Application Number:
JP14676381A
Publication Date:
March 22, 1983
Filing Date:
September 17, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/302; B32B15/08; H01J37/32; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Uchihara Shin