PURPOSE: To obtain a thin film-made limiting current type oxygen sensor which achieves excellent heat efficiency and excellent limiting current characteristic.
CONSTITUTION: A ZrO2-Y2O3 film 13 is formed on a silicon substrate 11 through a silicon oxide film 12. A cathode electrode 14 and an anode electrode 15 are formed thereon in a comb-shaped pattern with one inserted into the other. A gas diffusion layer 16 is formed on the electrodes and further, a heater electrode 17 is arranged on the layer. The heater electrode 17 is arranged on the layer. The heater electrode 17 is formed in a zigzag pattern covering a gap part between the cathode electrode 14 and the anode electrode 15. This enables the heating of a part effectively as positioned between the cathode electrode 14 and the anode electrode 15 where an ion conduction occurs actually in the ZrO2-Y2O3 film 13.
NAKAMURA KATSUAKI
ISHIBASHI ATSUNARI
KATO YOSHINORI
CHIKYU KANKYO SANGYO GIJUTSU
| JPS62198748A | 1987-09-02 | |||
| JPS5374495A | 1978-07-01 |
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