Title:
VAPOR GROWTH DEVICE
Document Type and Number:
Japanese Patent JPS6050919
Kind Code:
A
Abstract:
PURPOSE:To prevent the deposit of product on a wall surface and increase the efficiency of reaction of reaction gas by a method wherein an exhaust nozzle is provided facing a mixed gas supply nozzle across a susceptor, and gas flows are formed only on the surface of an Si substrate. CONSTITUTION:A carrier gas released from a carrier gas supply port 18 flows toward an exhaust port 22. On the other hand, the mixed gas of the reaction gas released from a nozzle 24 with the carrier gas flows along the surfaces of the Si substrate 15 and the susceptor 23. In this case, the exhaust nozzle 27 is arranged in back of the susceptor 23 and made to act a compulsive exhaust force through an aperture 26, therefore the flow of the mixed gas on the surface of the susceptor 23 and the flow of carrier gas above it flow over the susceptor 23 while keeping parallel. Thereby, the amount of source gas or that of doping gas can be kept to a necessary minimum. Besides, the generation of unnecessary deposits on the wall surface of a reaction chamber 8 can be suppressed.
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Inventors:
NOZAKI JIYUNICHI
SHIMA HIROZOU
SHIMA HIROZOU
Application Number:
JP15860383A
Publication Date:
March 22, 1985
Filing Date:
August 30, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
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