Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0774238
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device having NMOS type elements in which a transistor can be formed as designed and an isolation region can be formed with high planarity.
CONSTITUTION: In a semiconductor device having MNOS type elements, an isolation region 100 is formed of an oxide 2 of 3.0nm thick or less and charges stored on the interface between the oxide 2 and a nitride 3.
Inventors:
OKUMURA NOBUO
Application Number:
JP24396293A
Publication Date:
March 17, 1995
Filing Date:
September 02, 1993
Export Citation:
Assignee:
SUMITOMO METAL IND
International Classes:
H01L21/761; H01L21/76; H01L29/78; (IPC1-7): H01L21/76; H01L21/761; H01L29/78
Attorney, Agent or Firm:
Akio Shiono (4 outside)
Next Patent: FABRICATION OF SEMICONDUCTOR DEVICE