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Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
Japanese Patent JPS59986
Kind Code:
A
Abstract:

PURPOSE: To obtain a semiconductor laser element of high quality by controlling carrier density of a Te-doped N type clad layer.

CONSTITUTION: When Te is used as a dopant of an N type GaAlAs clad layer, the function as an effective N type clad layer can be imparted to a crystal layer which has high mixture crystal of a laser element that oscillates a visible light by setting the Te carrier density of a GaAlAs clad layer in the range of 2×1017∼2×1018cm-3 irrespective of the type of the semiconductor matrial of an active layer. In this manner, a semiconductor laser element of a low threshold current having preferable element characteristics can be obtained.


Inventors:
TAKENAKA TAKUO
KANEIWA SHINJI
YANO MORICHIKA
Application Number:
JP11023682A
Publication Date:
January 06, 1984
Filing Date:
June 25, 1982
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01L21/208; H01S5/00; H01S5/30; (IPC1-7): H01S3/18
Domestic Patent References:
JPS5688388A1981-07-17
JPS5790990A1982-06-05
JPS5320881A1978-02-25
Attorney, Agent or Firm:
Sugiyama Takeshi



 
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