Title:
MANUFACTURE OF PHOTOELECTRIC CONVERTING DEVICE
Document Type and Number:
Japanese Patent JPS5818973
Kind Code:
A
Abstract:
PURPOSE:To reduce the reflection factor in the wide wavelength region of the titled device by a method wherein a metal oxide containing film, to be used for prevention of reflection, is screen-printed on the light-irradiating surface of the semiconductor which generates photoelectromotive force using a plate of 50-800 meshes, and then the light is irregularly reflected in the film by heating up the film at the temperature of 100-950 deg.C. CONSTITUTION:A PSG film, containing high density of p, is deposited on the surface of a p type substrate 1 consisting of single crystal or polycrystalline, p is diffused in the substrate 1 by performing a heat treatment, and an n<+> layer 2 is formed. Then, a comb-type electrode 7 and an external load-out electrode 6 are formed on the prescribed region located above the layer 2 by performing a screen printing using the paste such as Ag, Al, Ni and the like, a film of 600- 1,000Angstrom in thickness, which will be used for reflection-preventing film and consisting of a metal oxide, is adhered to the whole surface including the electrodes 6 and 7, and innumerable concavities 15 and convexities 14 are generated on the surface by heating up at the temperature range of 100-950 deg.C. Subsequently, a part of the electrode 6 is exposed, and a back side electrode 4 consisting of the same material as the substrate 1 is deposited on its back side.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP11729181A
Publication Date:
February 03, 1983
Filing Date:
July 27, 1981
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L31/0216; (IPC1-7): H01L31/10
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