Title:
【発明の名称】高分子エレクトレツト素子の製造方法
Document Type and Number:
Japanese Patent JPS6023516
Kind Code:
B2
Abstract:
PURPOSE:After heat treated in a specific temperature range, a polyvinyliden fluoride resin containing beta-type crystals is irradiated with ionizing radiation to from piezo- electric material of organic film with high fabricability and high piezo-electric properties. CONSTITUTION:Films of polyvinylidene fluoride containing beta-type crystals which are prepared through a conventional process for producing oriented high-molecular- weigth films are heat treated in a temperature range from 40 deg.C lower than to 5 deg.C higher than the melting point of the resin, preferably from 20 deg.C lower to 5 deg.C higher for 5 min to 50 hr. Further ionizing radiation is irradiated to the resin in an amount of 0.05-50 Mrad and a direct current electron field is applied with voltage lower than that of dielectric breakdown of polyvinylidene fluoride film, for example, 100-500 KV/cm at room temperature -180 deg.C, preferably 80-160 deg.C for a prescrived period of time.
Inventors:
MYATA SEIZO
ANDO MINORU
TASAKA SHIGERU
OKANO RYOJI
SEO IWAO
ICHIHARA YOSHIJI
ANDO MINORU
TASAKA SHIGERU
OKANO RYOJI
SEO IWAO
ICHIHARA YOSHIJI
Application Number:
JP11837177A
Publication Date:
June 07, 1985
Filing Date:
September 30, 1977
Export Citation:
Assignee:
MITSUBISHI PETROCHEMICAL CO
International Classes:
B29C71/02; B29C71/00; C08J7/00; H01B1/00; H01B3/00; H01B3/44; H01G7/02; H01L41/45; (IPC1-7): H01L41/22; H01B3/30; H01G7/02
Attorney, Agent or Firm:
Ishido
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