PURPOSE: To obtain a solid-state image pickup device having the performance for obtaining an excellent picture by forming a light absorbing film on a shield film.

CONSTITUTION: An insulating film 8 is formed on a light shield film 4 so as to cover the entire surface of a D type semiconductor substrate 1. The light absorbing film 9 is formed on the insulation film 8 so as to be placed on the light shield film only. In a television camera using a solid-state image pickup device with the constitution like this, the light contacting vertically onto the surface of this device substantially is made incident partly to the 1n channel diffusion layer 2 through the insulation films 8, 3 and the remaining light contacts the surface of the light absorbing film 9. Since the light contacted with the surface of the film 9 is absorbed effectively by the film 9 partly, the amount of light made incident again to the diffusion layer 2 after being contacted onto the surface of the lens is decreased less than that of a television camera using a solid-state image pickup device where the light is contacted directly to the entire surface of the light shield film 4. Thus, flare is reduced effectively.