Title:
【発明の名称】半導体シリコンウェーハの洗浄方法
Document Type and Number:
Japanese Patent JP2914555
Kind Code:
B2
Abstract:
A method of cleaning a semiconductor silicon wafer, which can suppress and reduce adhesion of particles to the surface of the wafer comprises the steps of cleaning the semiconductor silicon wafer by using hydrofluoric acid aqueous solution containing a surfactant, and there-after rinsing the semiconductor silicon wafer by using pure water containing ozone.
Inventors:
NAKANO MASAMI
UCHAMA ISAO
TAKAMATSU HIROYUKI
UCHAMA ISAO
TAKAMATSU HIROYUKI
Application Number:
JP20532194A
Publication Date:
July 05, 1999
Filing Date:
August 30, 1994
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
B08B3/08; C11D3/04; C11D7/02; C11D7/08; C11D7/22; H01L21/304; H01L21/306; (IPC1-7): H01L21/304
Domestic Patent References:
| JP3228328A | ||||
| JP5855323A | ||||
| JP1183824A | ||||
| JP5102115A | ||||
| JP62198127A |
Attorney, Agent or Firm:
Shoji Ishihara