Title:
【発明の名称】半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2812288
Kind Code:
B2
Abstract:
There is provided a method of manufacturing a semiconductor device, comprising steps of forming an insulating film on a semiconductor substrate; forming a first film of a first material to cover the insulating film; forming a contact-hole through the insulating film and the first film so that the semiconductor substrate is exposed in a bottom of the contact hole; forming a second film of a second material to fill the contact hole and cover the first film; and, removing the first film and the second film in an area other than the contact hole, wherein the first film is etched at a greater etching rate than that of the second film to form a buried contact plug comprising a part of the second film. The semiconductor device thus obtained has no plug loss. The use of a spacer layer to form a contact hoe by selective etching is also shown.
Inventors:
Eiichiro Kakehashi
Application Number:
JP4116496A
Publication Date:
October 22, 1998
Filing Date:
February 28, 1996
Export Citation:
Assignee:
NEC
International Classes:
H01L21/28; H01L21/302; H01L21/3065; H01L21/768; H01L23/485; (IPC1-7): H01L21/28; H01L21/3065; H01L21/768
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)