Title:
【発明の名称】犠牲層を用いた微細構造体の製造方法
Document Type and Number:
Japanese Patent JP2951922
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the sealing phenomenon of a silicon first structure, due to the elimination of a sacrifice layer by eliminating the sacrificial oxide layer by performing etching with a steam phase atmosphere that contains a steam of HF anhydride and methanol. SOLUTION: An oxide film 32 and a nitride film 33 are deposited on a silicon substrate 31, and a first polysilicon film 37 is deposited on the nitride film 33. Then, a first TOSE film pattern is formed on the first polysilicon film 37 as a sacrificial layer for providing a space for forming a fine structure, and a second polysilicon film 35 that is the material of the fine structure is deposited. Then, a second TOSE film is deposited as the mask of the second polysilicon film 35, the second polysilicon film 35 is subjected to dry etching selectively, a fine structure pattern is formed, and then a photoresist is eliminated. After that, it is arranged in a space that is filled with the steam of HF anhydride and methanol, and the exposed first TOSE film pattern is subjected to steam phase etching by the HF anhydride and methanol, thus forming a space 100.
Inventors:
RI SHOHYUN
CHO GENYOKU
RI SHOSHO
HAKU SHUTAI
RYU KEISHUN
CHO GENYOKU
RI SHOSHO
HAKU SHUTAI
RYU KEISHUN
Application Number:
JP18239897A
Publication Date:
September 20, 1999
Filing Date:
July 08, 1997
Export Citation:
Assignee:
KANKOKU DENSHI TSUSHIN KENKYUSHO
International Classes:
H01L21/302; B81C1/00; H01L21/20; H01L21/306; H01L21/3065; H01L49/00; (IPC1-7): H01L49/00; H01L21/306
Domestic Patent References:
| JP8195381A | ||||
| JP3241832A | ||||
| JP881788A | ||||
| JP7335602A | ||||
| JP6306660A | ||||
| JP7263416A |
Attorney, Agent or Firm:
Kazuko Tomita (1 outside)