PURPOSE: To decrease the defect density on the surface of a hydrogenated amorphous silicon film by treating it with electrically neutral radicals.
CONSTITUTION: A reaction chamber 46 accommodating a wafer 41 is sufficiently evacuated. While the wafer is maintained at 200°C by a heater 47a, silane gas, as a process gas, is introduced to the reaction chamber 46 through a mercury tank 48, in which mercury is heated by a heater 50. A low-pressure mercury vapor lamp 42 is lit to irradiate the wafer 41 with ultraviolet through a synthetic quartz window 44. As a result, an amorphous silicon layer 43 is deposited on the wafer. Then, hydrogen is introduced to the reaction chamber, so that the wafer surface is treated with hydrogen radicals decomposed by excited mercury. The film formation by mercury-assisted photo-CVD and the surface treatment by hydrogen radicals are alternately performed to form hydrogenated amorphous silicon film.
NOZAKI HIDETOSHI
NIIYAMA TAKAKO
ISHIZUKA YOSHIKI
YAMAGUCHI TETSUYA
IIDA YOSHINORI
FURUKAWA AKIHIKO
