【発明の名称】残留歪のない超電導膜形成用ターゲット材の製造法

Title:

【発明の名称】残留歪のない超電導膜形成用ターゲット材の製造法

Document Type and Number:

Japanese Patent JP2595584

Kind Code:

B2

Abstract:

In preparing a target material for a superconducting film by hot press process, a vacuum atmosphere is replaced with an inert gas atmosphere containing 0.1 to 10 % by volume of oxygen and having a pressure of 1 to 100 Torr at a predetermined temperature ranging from 350 to 700 DEG C in the step of raising the temperature, and a material to be sintered is held within said inert gas atmosphere for 1 to 10 hr, thereby preparing a target material having a homogeneous composition and freed from permanent set.

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Inventors:

Takuo Takeshita
Tadashi Sugihara

Application Number:

JP29832087A

Publication Date:

April 02, 1997

Filing Date:

November 26, 1987

Export Citation:

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Assignee:

Mitsubishi Materials Corporation

International Classes:

C23C14/34; C01G1/00; C01G3/00; C04B35/00; C04B35/45; C04B35/645; C04B41/87; C23C14/08; H01B12/00; H01B12/02; H01B13/00; H01L39/24; (IPC1-7): C04B35/45; C01G1/00; C01G3/00; C04B41/87; C23C14/34; H01B12/00; H01L39/24

Domestic Patent References:

JP1100057A

Attorney, Agent or Firm:

Kazuo Tomita (1 person outside)

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