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Title:
【発明の名称】フオ-カルプレ-ン検出器アレイにおける前置増幅器
Document Type and Number:
Japanese Patent JPS61500636
Kind Code:
A
Abstract:
A pre-amplifier located "at the focal plane" of a detector array is disclosed which uses MOSFET transistors operated in the "weak inversion" region to provide operational amplifier performance. The dimensions of certain of the transistors are designed to minimize noise amplification. Feedback resistance for the operational amplifier is provided by switched capacitance using MOSFET transistors as switches, thereby permitting adjustment of the amplifier gain. Implanted and non-implanted MOSFET transistors are used in the differential amplifier in such a way as to avoid the need for a biasing network.

Inventors:
Bridgewater, Walter F
Decaro, Robert Y
Larson, Logier
Ruerin Yee, Wall
Application Number:
JP50071185A
Publication Date:
April 03, 1986
Filing Date:
November 21, 1984
Export Citation:
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Assignee:
Abbin Sensors Co-Polation
International Classes:
H01J40/14; H03F3/08; G01J1/44; H03F3/45; (IPC1-7): G01J1/44
Domestic Patent References:
JPS58196099A1983-11-15
JPS5855882B21983-12-12
JP57161297B
JPS5565441A1980-05-16
JPS5737283B21982-08-09
JPS55118690A1980-09-11
JPS5596698A1980-07-23
JPS584330B21983-01-26
JPS5855881B21983-12-12
JPS5789535A1982-06-03
Attorney, Agent or Firm:
Heikichi Odashima



 
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