Title:
REACTIVE ION BEAM ETCHING DEVICE
Document Type and Number:
Japanese Patent JPS6049629
Kind Code:
A
Abstract:
PURPOSE:To remove impurities such as a chloride, etc. deposited on the surface of an electrostatic lens at a reactive ion beam etching device by a method wherein a heating means is provided to the electrostatic lens, and a large current is flowed the electrostatic lens thereof to bake the lens at a high temperature. CONSTITUTION:An electrostatic lens 4 is provided between an accelerating electrode 2 and an etching substrate 5 to suppress the expanse of ions, and to form a parallel beam of favorable uniformity, and by forming an electric field (a potential field) between the accelerating electrode 2 and the etching substrate 5, the locus of the ion beam heading toward the outer direction is corrected to the parallel beam. Because the electrostatic lens 4 thereof is provided in the reactive ion beam, impurities such as a chloride, etc. are deposited on the surface of the electrostatic lens 4. Thereupon, a heater 7 is equipped to the electrostatic lens 4, and by heating at a high temperature, impurities deposited on the surface of the electrostatic lens 4 are removed.
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Inventors:
WATAKABE YAICHIROU
TAKEUCHI SUSUMU
TAKEUCHI SUSUMU
Application Number:
JP15918583A
Publication Date:
March 18, 1985
Filing Date:
August 29, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/302; H01J37/32; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS5767173A | 1982-04-23 | |||
| JPS5693330A | 1981-07-28 | |||
| JPS566441A | 1981-01-23 |
Attorney, Agent or Firm:
Masuo Oiwa