Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5856345
Kind Code:
A
Abstract:
PURPOSE:To enable adhesion of a glassivation type semiconductor substrate and a supporting electrode of a semiconductor device by a method wherein Al is supplied from the supporting electrode side. CONSTITUTION:The Si semiconductor substrate 3 has layers 3d-3a from the main surface on the lower side toward the main surface on the upper side, and the whole layers 3a-3d are exposed to the main surface on the upper side. Al layers are provided on the layers 3a and 3d sides, and two layers of Al and Cu are provided in order from the cathode electrode 1 side and the anode electrode 5 side on the electrode 1 side and on the electrode 5 side regulating film thickness of Al and Cu as to make Cu of adhesion solder to be less than 32 atom percent, and are soldered. Accordingly adhesion of Al-Cu being able to be adhered at a low temperature can be applied for adhesion of the glassivation type semiconductor substrate and the electrode.
Inventors:
BABA NOBORU
OONUKI HITOSHI
KIZAWA KENICHI
SUWA MASATERU
KOJIMA ISAO
OONUKI HITOSHI
KIZAWA KENICHI
SUWA MASATERU
KOJIMA ISAO
Application Number:
JP15361381A
Publication Date:
April 04, 1983
Filing Date:
September 30, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/52; H01L21/58; (IPC1-7): H01L21/58
Attorney, Agent or Firm:
Katsuo Ogawa