RADIATION RESISTING IIL INTEGRATED CIRCUIT DEVICE

Title:

RADIATION RESISTING IIL INTEGRATED CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JPS6024724

Kind Code:

A

Abstract:

PURPOSE: To stabilize the circuit operation by changing the bias current of an IIL circuit in accordance with the variation of characteristics due to irradiation of γ-rays.

CONSTITUTION: If a current gain parameter of a transistor (TR) T3 is used as a sensor of the quantity of γ-ray irradiation, a signal which increases an output current I is generated by a converting circuit 1 when the current gain of the TR T3 is reduced (from 7 to 9 in figure) and a collector potential V2 of the TR T3 is raised by irradiation. When this signal is generated from a circuit block 4, the bias current to an IIL circuit 3 is changed from I1' to I2' by the variation of characteristics due to irradiation of γ-rays in a current supply circuit consisting of two TRs T1 and T2, and the current gain at a point 8 is used to stabilize the circuit operation.

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Inventors:

OKABE TAKAHIRO
NAKAMURA TOORU
KIDA YUUZOU
NAGATA MINORU

Application Number:

JP13195783A

Publication Date:

February 07, 1985

Filing Date:

July 21, 1983

Export Citation:

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Assignee:

KOGYO GIJUTSUIN

International Classes:

H01L27/082; H01L21/8226; H03K19/003; H03K19/091; (IPC1-7): H01L27/08; H03K19/003; H03K19/091

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